Electrical and Computer Engineering Department
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Instructor: ECE 740 - Semiconductor Device Theory and Modeling
Instructor: Prof. M. Jamal Deen, ITB 104, Tel: 525-9140, ext 27137; E-mail:
jamal@mcmaster.ca
Lectures: Three hours per week
Office Hours: One
hour immediately after each class or by appointment.
Text: D.A. Neaman - Semiconductor Physics and
Devices, 3rd Ed., McGraw Hill (2002).
Course
Description: This course provides a fundamental in-depth knowledge
of the theory of operation, modeling, parameter extraction, scaling issues, and
higher order effects of active and passive semiconductor devices that are used
in mainstream semiconductor technology and emerging devices of practical
interest. There will be a comprehensive review of the theories and latest
models for the devices that are valid out to very high frequencies and the use
of physical device modeling. A review of the latest device technologies and
architectures will be presented. The course will be a prerequisite to the other
applied courses in microelectronics and photonics.
Course Outline
1. Review of semiconductor fundamentals.
2. Homo- and hetero-junction devices - theory;
modeling; parameter extraction.
3. MOS capacitors and transistors - theory;
modelling; parameter extraction; scaling issues; reliability.
4. Bipolar transistors - theory; modeling;
parameter extraction; scaling issues; reliability.
5. Photodetectors – theory; modelling;
parameter extraction; and scaling issues.
6. Transport and modeling of disordered
semiconductors (organic and polymeric) devices.
Project Description: The project can be a detailed review or investigation of a specific
part of the course. Examples are Nano-scale MOS architectures and performance; Advanced
silicon-based photodetectors; SiGe HBTs or Nanowire silicon-based transistors;
Transistor design and performance for specific (e.g low-noise) applications;
Device (MOS, BJT or HBT) parameter extraction techniques; Modeling issues of
silicon diodes at high frequencies; Carrier transport in nano-scale MOS transistors;
Conductivity of organic devices; Carrier scattering in nano-MOS transistors;
Modeling issues of passive components in silicon technology at microwave
frequencies; etc.
Grading: Assignments - 35% Project
- 35% Final Exam
- 30%
Selected References
IEEE Transactions on Electron Devices, Solid-State
Electronics, Journal of Applied Physics etc.
ECS, ICMTS, IEDM, ESSDERC, DRC Proceedings.
Device simulators and manuals – Synopsis, Silvaco, TMA
etc..
Y.P.Tsividis - Operation and Modelling of the MOS
Transistor, 2nd Ed., McGraw Hill (1999), (TK 7871.99.M44.T77)
D.J. Roulston - Bipolar Semiconductor Devices, McGraw
Hill (1990), TK 7871.86.R68.
D. Ferry, L. Akers and
C.T. Sah - Fundamentals of Solid-State Electronics,
World Scientific,
M. Shur, Physics of Semiconductor Devices, Prentice
Hall (1990), QC 611.S563.
S.M. Sze - Physics of Semiconductor Devices, John
Wiley & Sons (1981), TK 7871.85.S988.
S.M. Sze (Ed.)- Modern Semiconductor Device Physics,
John Wiley & Sons (1998), QC 611.M674.
M.S. Tyagi - Introduction to Semiconductor Materials
and Devices, John Wiley (1991), TK7871.85.T93.
S. Wang- Fundamentals of Semiconductor Theory and Device
Physics, Prentice Hall (1989), QC 611.W32.
R. Warner & B. Grung - Semiconductor Device
Electronics, Holt Rinehart & Winston (1991), ISBN 0-03-009559-X.