Short Courses - Dr. M. Jamal Deen

1.             RF Noise Modeling in MOSFETs Including Gate Current Effects, IEEE International Microwave Symposium Workshop – Noise Measurements and Modeling for CMOS, San Francisco, CA (11 June 2006).

2.             Noise Theory, High-frequency Noise Characterization, HF Noise Modeling of MOSFETs, Design Strategies of LNA, Noise Research Activities at McMaster – C.H. Chen and M.J. Deen, Short Course at Sony Semiconductor Corporation, 7 lectures (Thursday 28 July 2005).

3.             RF Noise in MOSFETs – Experiments; RF Noise Modeling of MOSFETs; and Effect of the Gate Tunneling Current on the RF Noise of MOSFETs - M.J. Deen, Short Course at Seoul National University, 3 lectures (30 May, 2005).

4.             High-Frequency Noise Modeling of MOSFETs for RF IC Applications – M.J. Deen and C.H. Chen, Fabless Semiconductor Association (FSA) Modeling Workshop, San Jose, CA (15 September 2004).

5.             CMOS Device Noise Extraction and Performance – M.J. Deen and C.H. Chen, International Microwave Symposium (IMS)/Radio Frequency Integrated Circuits (RFIC) Sponsored Workshop, Texas (June 2004)

6.             RF Noise Modeling of MOSFETs, Fabless Semiconductor Association (FSA) Modeling Workshop, Santa Clara, CA (Thursday 12 October 2000).

7.             High Frequency Noise Measurements and Modeling of MOSFETs, Tutorial Short Course at the IEEE International Conference on Microelectronic Test Structures (ICMTS 99) (Monday March 15 1999).

8.             Semiconductor Devices - Parameter Extraction Techniques, Microwave Noise Modeling and Circuit Applications, Research Short Course at Delft Institute of Microelectronics and Submicron Technology (DIMES), Technical University of Delft, 8 lectures (June 23, 25, 30 and July 7, 1997).

Invited Seminars - Dr. M. Jamal Deen

1.             Plastic Microelectronics with Organic or Polymeric Thin Film Transistors, IEEE Electron Device Society Distinguished Lecture, CINVESTAV, Mexico City, Mexico (Monday 4 September 2006).

2.             Highly Integrated Biosensors, The IEEE Electron Devices Society Distinguished Lecture, CINVESTAV, Mexico City, Mexico (Monday 4 September 2006).

3.             Plastic Microelectronics, IEEE Electron Device Society Distinguished Lecture, Universitat Rovira i Virgili, Tarragona, Spain (Thursday 27 July 2006).

4.             ICs for Low-Power Microsystems, The IEEE Electron Devices Society Distinguished Lecture, University of the Balearic Islands, Mallorca, Spain (Monday 29 May 2006).

5.             Plastic Microelectronics, The Max Planck Institute, Stuttgart, Germany (Wednesday 24 May 2006).

6.             Integrated Biosensors, The IEEE Electron Devices Society Distinguished Lecture, University of Central Florida, Orlando, Florida (Saturday 25 February 2006).

7.             Some Issues in MOSFET Noise Modeling and Characterization, IEEE ICMTS 2006 Conference, RF Noise Panel Member and Presenter, Austin Texas (Tuesday 7 March 2006).

8.             Noise and Performance Characteristics of Advanced Silicon Devices and  Circuits, IEEE Electron Device Society Distinguished Lecture, Orange County EDS/MTT Joint Chapter, Irvine, California (Thursday 20 October, 2005).

9.             Reliability Effects of RF CMOS ICs, Seoul National University, Korea (Wednesday 1 June, 2005).

10.         Low-voltage, Low-power CMOS Integrated Circuits for Radio Frequency Applications, Seoul National University, Korea (Friday 27 May, 2005).

11.         Noise Issues in Deep Sub-micron Devices, National Semiconductor Corp., Santa Clara, California (5 May 2005).

12.         Micro- and Nano-systems Components Research, A Brief Overview, Agilent Technologies, Palo Alto, California (Monday 18 April 2005).

13.         High-Frequency Noise Modeling of MOSFETs for RF IC Applications, RF Microdevices, Greensboro, North Carolina  (Thursday 17 February 2005).

14.         Low-Frequency Noise in SiGeC-Based pMOSFETs, RF Microdevices, Greensboro, North Carolina  (17 Feb. 2005).

15.         HF Noise Modeling of MOSFETs for RF IC Applications, RF Microdevices, San Jose, CA (10 Dec. 2004).

16.         Low-Power RFICs for Transceiver Applications, IEEE Electron Device Society Distinguished Lecture, Eindhoven University of Technology, Eindhoven, Nederland (Friday 16 July 2004).

17.         Low-Power RFICs for Transceiver Applications, IEEE Electron Device Society Distinguished Lecture, Universitat Rovira i Virgili, Tarragona, Spain (Monday 21 June 2004).

18.         Low-Power RFICs for Transceiver Applications, IEEE Circuits and Systems Society and Electron Device Society Distinguished Lecture, Kitchener-Waterloo Section Seminar (Tuesday 18 May 2004).

19.         Non-conventional FETS or Polymer FETs, Istanbul Technical University, Turkey (Tuesday 22 July 2003).

20.         Low Frequency Noise in BJTs and FETs, Istanbul Technical University, Turkey (Monday 21 July 2003).

21.         Electrical Characterization Techniques for Nanoscale Semiconductors and Semiconductor Dielectric Interfaces, Istanbul Technical University, Turkey (Friday 18 July 2003).

22.         Some Electrical Characterization Techniques for Semiconductor-Silicon Dioxide Interface - A Review, INAOE, Puebla, Mexico (Tuesday 24 July 2003).

23.         Low Power RFICs for Transceiver Applications,  Departament d’Enginyeria Electronica, Universitat Politecnica de Catalunya (Thursday 24 April 2003).

24.         Electrical Characteristics Polymer Field-Effect Transistors, Departament d’Enginyeria Electronica, Universitat Politecnica de Catalunya (Wednesday 23 April 2003).

25.         Microelectronics and Opto-Electronics: A Review of Our Research Program, Departament d’Enginyeria Electronica, Universitat Politecnica de Catalunya (Wednesday 23 April 2003).

26.         Une Réflection de Quelques Sujets Intéressants Pour La Recherche du Futur, CEM2, Université de Montpellier, France (Friday 20 December 2002).

27.         Radio Frequency Integrated Circuits –Mixers, Oscillators and Phase-Locked Loops, Zarlink Corporation, Kanata Ontario (Thursday 5 December 2002)

28.         Radio Frequency Integrated –Mixers, Oscillators and Phase-Locked Loops, Skyworks/Conexant Inc., Ottawa, Ontario (Thursday 5 December 2002).

29.         Radio Frequency Integrated Circuits –Mixers, Oscillators and Phase-Locked Loops, RIM, Waterloo, Ontario (Wednesday 4 December 2002).

30.         Radio Frequency Integrated Circuits –Mixers, Oscillators and Phase-Locked Loops, Gennum Corporation, Burlington, Ontario (Tuesday 3 December 2002).

31.         Radio Frequency Integrated Circuits –Mixers, Oscillators and Phase-Locked Loops, Zarlink Corporation, Kanata Ontario (Thursday 19 September 2002).

32.         Radio Frequency Integrated Circuits for Transceiver Applications, Skyworks/Conexant Inc., Ottawa, Ontario (Thursday 19 September 2002)

33.         Radio Frequency Integrated Circuits for Transceiver Applications, Gennum Corporation, Burlington, Ontario (Tuesday 17 September 2002).

34.         Microelectronics and Some Interesting Applications, CEM2, Université de Montpellier, France (Wed 26 June 2002).

35.         RF MOS Noise Modeling and Design of Low Noise RFICs, Chalmers University, Gothenburg, Sweden, (Thursday 21 March 2002).

36.         New Ways to Operate Transistors for Better Circuit Performance, Gennum Corporation, Burlington Ontario (Mon. 25 March 2002).

37.         Low-Noise, Low-Power Devices and Integrated Circuits, RIM Corp., Waterloo Ontario (Wed. 13 March, 2002).

38.         Microelectronic Device and Circuits Research, Gennum Corporation, Burlington Ontario (Wed. 20 June, 2001).

39.         Microelectronic Device and Circuits Research, RIM Corporation, Waterloo Ontario (Thursday 31 May, 2001)

40.         Ultra Low-Voltage Low-Power Voltage Controlled Oscillators, Institute of Radio Physics, Calcutta University, Calcutta, India (Wednesday 20 December 2000).

41.         Ultra Low-Voltage Low-Power Voltage Controlled Oscillators, Department of Electrical Engineering, Chulalongkorn University, Bangkok, Thailand (Tuesday 12 December 2000).

42.         RF Noise Modeling of MOSFETs, ECE Dept., National Univ. of Singapore, Singapore (Thursday 30 Nov. 2000).

43.         RF Noise Modeling of MOSFETs, EEE Dept., Nanyang Technological Univ., Singapore (Monday 27 Nov. 2000).

44.         RF Microelectronic Devices and Circuits, Conexant Inc., Newport Beach , CA (Monday 2 October 2000).

45.         RF Noise Modeling of MOSFETs, National Semiconductor Corp., Santa Clara, CA (Friday 29 September 2000).

46.         RF Microelectronic Devices and Circuits, Electrical Engineering Department, Eindhoven University of Technology, Eindhoven, Nederland, (Friday 15 September 2000).

47.         A General Noise and S-Parameters De-Embedding Procedure for On-Wafer High-Frequency Noise Measurements of MOSFETs, Mitel Corporation (Thursday 31 August 2000).

48.         Effects of DC Stresses on the RF Properties of NMOSFETs, Mitel Corporation (Thursday 31 August 2000).

49.          Effects of Forward Biasing the Substrate on the Properties of CMOS Ring Oscillators, Mitel Corporation (Thursday 31 August 2000).

50.         High Frequency Noise Modeling of MOSFETs, Angstrom Laboratory, Uppsala University, (Friday 19 March 1999).

51.         Some Circuit Applications of Gate-Controlled Lateral PNP Bipolar Junction Transistors, Mitel Corporation (Thursday 18 February 1999).

52.         High Frequency Noise Modeling of MOSFETs, Mitel Corporation (Thursday 18 February 1999).

53.         Gate-Controlled Lateral PNP Bipolar Junction Transistors: Characteristics, Modeling and Circuit Applications, Electrical and Computer Engineering Dept., McMaster University, Hamilton, Ontario (Thursday 3 September 1998).

54.         Gate-Controlled Lateral BJTs - Characteristics, Modeling and Experiments, Laboratoire des Physique des Composants a Semiconductors (LPCS), ENSERG, Grenoble, France (Thursday 9 July 1998).

55.         High Frequency Noise of MOSFETs - Modeling and Experiments, Rockwell Semiconductor Systems, Newport Beach, California, (Friday 20 February, 1998).

56.         BJT H.F. Noise Modeling and Experiments, Lab. of ECTM, DIMES, Delft Univ. of Technology (7 July, 1997).

57.         H.F. Noise Studies of MOSFETs, Laboratory of ECTM, DIMES, Delft University of Technology (7 July, 1997).

58.         Direct Extraction of AC Equivalent Circuit Parameters of Polysilicon Emitter BJTs from S-Parameters, Laboratory of ECTM, DIMES, Delft University of Technology (30 June, 1997).

59.         DC Extraction of RB and RE of Polysilicon Emitter BJTs, Laboratory of ECTM, DIMES, Delft University of Technology (30 June, 1997).

60.         Gate-Controlled Lateral BJTs - Characteristics, Modeling and Experiments, Laboratory of ECTM, DIMES, Delft University of Technology (25 June, 1997).

61.         Narrow Width MOSFETs - Parameter Extraction and Physical and Circuit Modeling, Laboratory of ECTM, DIMES, Delft University of Technology (25 June, 1997).

62.         Features and Mechanisms of the Saturating Hot-Carrier Degradation in LDD MOSFETs, Laboratory of ECTM, DIMES, Delft University of Technology (23 June, 1997).

63.         Simple Method to Extract the Parasitic Resistances of MOSFETs Using a Single Device, Laboratory of ECTM, DIMES, Delft University of Technology (23 June, 1997).

64.         Low Frequency Noise in Polysilicon Resistors and MOSFETs, Mitel Corporation, Kanata (29 April, 1997).

65.         Parameter Extraction and Noise Modeling of BJTs at Microwave Frequencies, INAOE, Puebla, Mexico (28 February 1997).

66.         Gate-Controlled Lateral PNP BJT: Characteristics, Modeling and Circuit Applications, Xilinx Semiconductor, San Jose, California (6 December 1996).

67.         High Frequency Noise Modeling of Polysilicon Emitter Bipolar Junction Transistors, Analog/Mixed Signal Process Development Group, National Semiconductor, Santa Clara, California (6 December 1996).

68.         Gate-Controlled Lateral PNP BJT: Characteristics, Modeling and Circuit Applications, Mitel Semiconductor, Ottawa (5 November 1996).

69.         Gate-Controlled Lateral PNP BJT: Characteristics, Modeling and Circuit Applications, Research Institute for Materials Science, Budapest, Hungary (3 September 1996).

70.         Gate-Controlled Lateral PNP BJT: Characteristics, Modeling and Circuit Applications, Integrated Transceivers Division, Philips Research, Eindhoven, Nederland (4 July 1996).

71.         Features and Mechanisms of the Saturating Hot-Carrier Degradation in LDD MOSFETs, Analysis and Reliability Division, IMEC, Leuven, Belgium (3 July 1996).

72.         Gate-Controlled Lateral PNP BJT: Characteristics, Modeling and Circuit Applications, Integrated RF technology Department, Rockwell Semiconductor Systems, Newport Beach, California (9 May 1996).

73.         Novel Applications of Lateral pnp Bipolar Transistors in a 0.8 m BICMOS Technology, Physics Department, National University of Singapore, Singapore (13 December 1995).

74.         Novel Applications of Lateral pnp Bipolar Transistors in a 0.8 m BICMOS Technology, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore (13 December 1995).

75.         The Early Mode of Hot-Carrier Degradation in LDD NMOSFETs: Its Features and Mechanisms, Electrical Engineering Department, National University of Singapore, Singapore (12 December 1995).

76.         A Simple Method to Extract the Parasitic Resistances from a Single MOSFET Using Measurements of Small Signal Conductances, TCAD and Modeling Group, AT&T Bell Laboratories, Allentown, Pennsylvania, (14 August 1995).

77.         Fast and Accurate Method of Extracting Two Critical Device Parameters of SAGCM InP/InGaAs Avalanche Photodiodes, DIMES, Delft University of Technology, Delft, Nederland (22 September 1994).

78.         Fast and Accurate Method of Extracting Two Critical Device Parameters of SAGCM InP/InGaAs Avalanche Photodiodes, Engineering Department, Cambridge University, Cambridge, United Kingdom (16 September 1994).

79.         Low Frequency Noise and Excess Currents Due to Trap-Assisted Tunneling in Double Barrier Tunneling Diodes, Advanced Semiconductor Processing Division, IMEC (Inter-University Microelectronics Center), Kapeldreef, Leuven, Belgium (23 September, 1993).

80.         Excess Currents and Low Frequency Noise Due to Trap-Assisted Tunneling in Resonant Tunneling Diodes, Electrical Engineering Dept., Eindhoven University of Technology, Eindhoven, Nederland (22 September, 1993).

81.         Noise Characterization and Modeling of Polysilicon Emitter Bipolar Junction Transistors at Microwave Frequencies, Elec. Engineering Dept., Eindhoven Univ. of Tech., Eindhoven, Nederland (22 September, 1993).

82.         Low Frequency Noise and Excess Currents Due to Trap-Assisted Tunneling in Double Barrier Tunneling Diodes, Applied Physics Department, Federal University of Technology (EPFL), Lausanne, Switzerland (17 Sept., 1993).

83.         Low Frequency Noise of GaAs- and InP-Based Resonant Tunneling Diodes, Electronics Laboratories, General Electric Aerospace, Syracuse, New York, USA (12 June 1992).

84.         Low Frequency Noise in Resonant Tunneling Diodes, Institut d'Electronique et de Microelectronique, ISEN, UMR, CNRS, Lille, France (27 May 1992).

85.         Physical and Circuit Modeling of Narrow Width MOSFETs, Institut d'Electronique et de Microelectronique, ISEN, UMR, CNRS, Lille France (27 May 1992).

86.         Modeling of Narrow Width MOSFETs, Laboratoire de Physique des Composants a Semiconducteurs, ENSERG, CNRS, Grenoble, France (25 May 1992).

87.         Narrow Width MOSFETs, Electrical and Computer Engineering Department, University of Waterloo, Ontario, Canada (4 March 1992).

88.         Narrow Width MOSFETs, Shanghai Institute of Metallurgy, Academica Sinica, Shanghai, China (5 December 1991).

89.         Low Frequency Noise in Double Barrier Resonant Tunneling Diodes, Shanghai Institute of Metallurgy, Academica Sinica, Shanghai, China (5 December 1991).

90.         Narrow Width MOSFETs, Physics Dept., Shanghai Univ. of Science and Tech., Shanghai, China (3 Dec. 1991).

91.         Low Temperature Microelectronics, Physics Department, Shanghai University of Science and Technology, Shanghai, China (2 December 1991).

92.         Hot-Carrier Degradation Studies in Short Channel NMOS Devices, Solid State Devices Division, Naval Research Laboratory, Washington, D.C., USA (10 May 1991).

93.         Parasitic Effects in Narrow Width MOSFETs, Advanced Semiconductor Material Science, Philips Research Laboratories, Eindhoven, Nederland (10 April 1991).

94.         A New Method for Determining the Parasitic Effects in Narrow Width MOSFETs, Electrical Engineering Department, Eindhoven University of Technology, Eindhoven, Nederland (9 April 1991).

95.         Low Frequency Noise Spectra and Temperature Dependent Characteristics of AlAs/GaAs/AlAs Resonant Tunneling Diodes, High Technology Center, Boeing Aerospace and Electronics, Seattle, Washington, USA (30 Nov. 1990).

96.         A New Method for Determining the Parasitic Effects in Narrow Width MOSFETs, Device Engineering Group, Semiconductor Components, Northern Telecom Electronics, Ottawa, Ontario, Canada (13 September 1990).

97.         Edge Effects in Narrow Width MOSFETs, Semiconductor Base Technology, General Technology Division, IBM Essex Junction, Vermont, USA (10 September 1990).

98.         DIBL in Short Channel MOS Devices, Advanced Semiconductor Processing Division, IMEC (Inter-University Microelectronics Center), Kapeldreef, Leuven, Belgium (13 July, 1990).

99.         DIBL in Short Channel MOS Devices: A Comparison between 300K and 77K, Advanced Theoretical and Experimental Physics, Philips Research Laboratories, Eindhoven, Nederland (12 July, 1990).

100.      Low Temperature Electronics, CTF Systems Inc, Port Coquitlam, B.C., Canada (27 February, 1990).

101.      Recent Developments in Networks/Devices Research, with S. Hardy, Distinguished Advanced Research and Technology Seminar (DARTS), Engineering Science, SFU, Burnaby, B.C., Canada (19 October 1989).

102.      Analyzing Short-Channel PMOS Devices for Cryo-CMOS Microelectronics, Semiconductor Components Group, Northern Telecom Electronics Ltd., Ottawa, Ontario, Canada (3 August 1989).

103.      Interaction Between Device Technologies and Network Switching Applications, with Prof. S. Hardy, Distinguished Advanced Research and Technology Seminar (DARTS), Engineering Science, SFU, Burnaby, B.C., Canada (13 October 1988).

104.      MOS Microelectronics at Low Temperatures, Semiconductor Components Group, Northern Telecom Electronics Ltd., Ottawa, Ontario, Canada (30 August, 1988).

105.      Low Temperature MOS Microelectronics, Process Development, SEEQ Technology Inc, San Jose, California, USA (15 April 1988).

106.      Low Temperature Operations of Si CCDs for Imaging Applications, with B. Jaggi, Engineering Science, SFU, Burnaby, B.C., Canada (29 October 1987).

107.      Low Temperature Electronics, Dominion Astrophys. Observatory, Nat. Res. Council, Victoria, B.C., (21 July, 1987).

108.      S-I-S Millimeter Wave Detectors, Radio Astronomy, Herzberg Institute of Astrophysics, National Research Council, Ottawa, Ontario, Canada (15 July 1987).

109.      Superconductivity - Review of the Theory and Electronic Applications, Microtel Pacific Research, Burnaby Mountain, B.C., Canada (23 March 1987).

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