68. A. U. Alam, Y. Qin, S. Nambiar, John T. W.
Yeow, M. M. R.
Howlader, Nan-Xing Hu, and M Jamal Deen, "Polymers and organic
materials-based pH sensors for healthcare applications", Progress in
Materials Science, 96 (2018) 174-216.
https://doi.org/10.1016/j.pmatsci.2018.03.008
67. A. U. Alam, Y. Qin, M. Catalano, L. Wang, M. J. Kim, M. M. R. Howlader, Nan-Xing Hu, and M Jamal Deen, "Tailoring MWCNTs and β-Cyclodextrin for Sensitive Detection of Acetaminophen and Estrogen" ACS Appl Mater Interfaces, 10 (25) (2018) 21411–21427. DOI: 10.1021/acsami.8b04639
66. T. Z. Redhwan, A. U. Alam, Y. M. Haddara, and M. M. R. Howlader, "Copper and liquid crystal polymer bonding towards lead sensing," Japanese Journal of Applied Physics, 57 (2018) 02BB03-8.
65. Y. M. Haddara and M. M. R.
Howlader, "Integration of
heterogeneous
materials for wearable sensors", Polymers, 2018, 10(1), 60.
https://doi.org/10.3390/polym10010060.
64. Yiheng Qin, Arif U Alam,
Si Pan, Matiar MR Howlader,
Raja Ghosh, Nan-Xing Hu, Hao Jin, Shurong Dong, Chih-Hung Chen, and M
Jamal Deen, "Integrated water quality monitoring system with pH, free
chlorine, and temperature sensors", Sensors and Actuators B:
Chemical, 255
(2018) 781-790.
63. T. Z. Redhwan, A. U.
Alam, M. Catalano, L. Wang, M. J. Kim, Y. M. Haddara, and M. M. R.
Howlader, "Direct bonding
of copper and liquid crystal polymer", Materials Letters, 212 (2018)
214-217.
62. A. U. Alam, Y. Qin, M. M. R. Howlader,
Nan-Xing Hu, and M. J. Deen, "Electrochemical sensing of
acetaminophen using multi-walled carbon nanotube and β-cyclodextrin",
Sensors and Actuators B: Chemical, 254 (2018) 896-909.
61. Y. Qin, A. U. Alam, M. M. R Howlader,
Nan-Xing Hu, and M. J. Deen, "Morphology and electrical
properties of inkjet-printed palladium/palladium oxide", Journal of
Materials Chemistry C, 5 (2017) 1893-1902.
60. A. U. Alam, Y. Qin, M. M. R. Howlader, and M. J. Deen, "Direct bonding of liquid crystal polymer to glass", RSC Advances, 6 (2016) 107200-107207.
59. Y Qin, S Pan, MMR Howlader, R Ghosh, NX Hu, and MJ Deen, "Paper-based, hand-drawn free chlorine sensor with poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)", Analytical Chemistry, 88 (21), 10384-10389 (2016).
58. Y. Qin, Arif Ul Alam, M. M. R. Howlader, Nan-Xing Hu, and M. Jamal Deen, "Inkjet Printing of a Highly Loaded Palladium Ink for Integrated, Low-Cost pH Sensors", Advanced Functional Materials, (2016).
57. Y. Qin, H. J. Kwon, A.
Subrahmanyam, M. M. R. Howlader,
P.
R.
Selvaganapathy,
Alex
Adronov,
and
M. Jamal Deen, "Inkjet-printed
bifunctional
carbon
nanotubes
for
pH
sensing", Materials Letters, 176 (2016)
68-70.
56. Y. Qin, M. M. R. Howlader, and M.
J. Deen, "Low-Temperature
Bonding
for
Silicon-Based
Micro-Optical
Systems", Photonics, 2 (2015)
1164-1201.
55. Y. Qin, Arif Ul Alam, Si Pan,
M. M. R. Howlader, Raja Ghosh, P R.
Selvaganapathy, Y. Wu, and M. J. Deen,"Low-Temperature
solution
processing
of
palladium/palladium
oxide
Films
and
their
pH
sensing
performance", Talanta, 146 (2016) 517–524.
54. R. Henda, O. Alshekhli, M.
Howlader, and J. Deen,"Nanocrystalline
diamond
films
prepared
by
pulsed
electron
beam
ablation
on
different
substrates", Journal of Materials Research, (2015) 1-8.
53. Y. Qin, H. J Kwon, M. M. R.
Howlader, and M. J. Deen,"Microfabricated
electrochemical
pH
and
free
chlorine
sensors
for
water
quality
monitoring:
recent
advances
and
research
challenges", RSC Advances,
5 (85) (2015) 69086-69109.
52. M. M. R. Howlader, Arif Ul Alam, Rahul P. Sharma, and M. J. Deen,"Materials analyses and electrochemical impedance of implantable metal electrodes", Physical Chemistry Chemical Physics, 2015, DOI: 10.1039/C4CP05899B.
51. M. M. R. Howlader, M. J. Deen, and T. Suga, "Nanobonding: A key technology for emerging applications in health and environmental sciences", Japanese Journal of Applied Physics 54, 030201 (2015).
50. Y. Qin, M. M. R. Howlader, M.
J. Deen,
Y. M. Haddara, and P. R. Selvaganapathy,
"Polymer Integration
for Packaging of Implantable Sensors", Sensors and Actuators B:
Chemical 202 (2014) 758–778.
49. Arif Ul Alam, M. M. R.
Howlader, and M. J. Deen,
"The Effects
of Oxygen Plasma and Humidity on Surface Roughness, Water Contact Angle
and Hardness of Silicon, Silicon Dioxide and Glass", Journal of
Micromechanics and Microengineering, 24 (2014) 035010 (14pp).
48. Arif Ul Alam, M. M. R. Howlader, and M. J. Deen, "Oxygen Plasma and Humidity Dependent Surface Analysis of Silicon, Silicon Dioxide and Glass for Direct Wafer Bonding", ECS Journal of Solid State Science and Technology, 2(12) P515-P523 (2013).
47. M. M. R. Howlader, F. Zhang, and M. J. Deen, "Formation
of
gallium arsenide nanostructures in pyrex glass", Nanotechnology, 24
(2013) 315301 (8pp).
46. M. M. R. Howlader, T. E. Doyle, S. Mohtashami, and J.R. Kish, "Charge transfer and stability of implantable electrodes on flexible substrate", Sensors and Actuators B: Chemical, 178(1) (2013) 132–139.
45. M. M. R. Howlader, T. E. Doyle, "Low temperature nanointegration for emerging biomedical applications", Microelectron. Reliab., 52(2) (2012) 361−374.
44. S. Mohtashami, M. R. Howlader, and T. E. Doyle, "Comparative Electrochemical Investigation of Pt, Au and Ti Electrodes on Liquid Crystal Polymer for the Application of Neuromuscular Prostheses", ECS Transactions, 35 (16) 23-33 (2011).
43. T. Yu, M. M. R. Howlader, F. Zhang, M. Bakr, "Nanobonding for multi-junction solar cells at room temperature", ECS Transactions, 35 (2) 3-10 (2011).
42. M. M. R. Howlader, F. Zhang, M. J. Deen, T. Suga, and A. Yamauchi, "Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature", Journal of Vacuum Science and Technology A 29(2) (2011) 021007 - 021007-7.
41. M. M. R. Howlader, A.
Yamauchi and
T.
Suga, "Surface
activation based nano-bonding and interconnection at
room
temperature", Journal
of
Micromechanics
and
Microengineering,
21(2)
(2011)
025009
(10pp).
40. M. M. R. Howlader, F.
Zhang, and M. J. Kim, “Annealing
temperature-dependent
interfacial
behavior
of
silicon
wafers
bonded
using
sequential
plasma
activation”, IEEE
Journal
of Microelectromechanical Systems Letters, 20(1) (2011) 17-20.
39. M. M. R. Howlader, P. R.
Selvaganapathy, M. J. Deen, and T. Suga, "Nanobonding
technology
towards
electronic, fluidic and photonic systems integration", IEEE Journal of
Selected Topics on Quantum Electronics, 17(3) (2011) 689 - 703.
38. Jian Sun, Wanguo Liang, Yi
Gan, Qingyang Xu, Chang-qing Xu, Matiar
Howlader, Koji Nakamura, and Tadashi Kishimoto, "Annealed proton-exchanged
LiNbO3
ridge waveguide for photonics application", Proc. SPIE 7750 77500M
(2010).
37. F. Zhang, M. G. Kibria, K.
Cormier,
and M. M. R. Howlader,
"Surface and interface
characterization of
sequentially plasma activated silicon, silicon dioxide and germanium
wafers for
low temperature bonding applications", ECS Transactions, 33(4)
(2010) 329-338.
36. M. M. R. Howlader and
F. Zhang, "Void-free
strong bonding of surface activated silicon wafers
from room temperature to annealing at 600°C", Thin
Solid
Films, 519 (2010) 804-808.
35. M. M. R. Howlader and T.
Suga,
“Comparative
annealing effect on silicon wafers bonded in air and UHV
for
MEMS/microfluidic packaging”, Journal of
Micro/Nanolithography,
MEMS, and MOEMS (JM3) 9(4), 041107 (2010).
34. Matiar R. Howlader,
“MEMS/microfluidics
packaging without heating”, Proc. SPIE, 7592 (2010) 75920H.
33. M. M. R. Howlader, M. G.
Kibria, and
F. Zhang, “Hybrid plasma
bonding of germanium and glass wafers”, Materials
Letters, 64 (2010) 1532-1535.
32. M. M. R. Howlader, M. G.
Kibria, F.
Zhang, and, M. J. Kim, “Hybrid
plasma bonding for void-free strong bonded
interface of silicon/glass at 200°C”, Talanta, 82 (2010)
508-515.
31. M. M. R. Howlader, G.
Kagami, T. H.
Lee, J. G. Wang, M. J. Kim, and A. Yamauchi, “Sequential plasma
activated
bonding mechanism of silicon/silicon wafers”, IEEE Journal of
Microelectromechanical
Systems, 19(4) (2010) 840-848.
30. M. M. R. Howlader, T. Kaga
and T.
Suga,“ Investigation
of
bonding
strength
and
sealing
behavior
of
aluminum/stainless
steel
bonded
at
room
temperature”, Vacuum 84
(2010)
1334-1340.
29. M. M. R. Howlader, F.
Zhang, and M.
G. Kibria, “Voids
nucleation at sequentially plasma activated silicon/silicon
bonded interface”, Journal of Micromechanics and Microengineering,
20 (2010)
065012 (10pp).
28. M. G. Kibria, F. Zhang, T.
H. Lee, M.
J. Kim, and M. M. R. Howlader,
“Comprehensive
investigation
of
sequential
plasma
activated
Si/Si
bonded
interface
for
nano-integration
on
wafer
scale”,
Nanotechnology, 21(13) (2010) 134011.
27. M. M. R. Howlader, T.
Suga, F.
Zhang,
T. H. Lee and M. J. Kim, “Interfacial
behavior
of
surface
activated
p-GaP/n-GaAs
bonded
wafers
at
room
temperature”, Electrochemical
and
Solid State Letters 13 (3) (2010) H61-H65.
26. M. M. R. Howlader, J. G.
Wang, and
M.
J. Kim, “Influence of
nitrogen microwave radicals on sequential plasma
activated bonding”, Materials Letters 64 (2010) 445-448.
25. M. M. R. Howlader, T.
Suga, H. Itoh,
T. H. Lee, and M. J. Kim,“ Role of heating on plasma
activated silicon wafers
bonding”, Journal of Electrochemical Society 156 (11) (2009)
H846-H851.
24. M. M. R. Howlader, T. Suga, and M. J. Kim, “A novel bonding method for ionic wafers", IEEE Transactions of Advanced Packaging, 30(4) (2007) 598-604.
23. Matiar R. Howlader,
Hironori Itoh,
T.
Suga, and Moon Kim, “Sequential
plasma activated process for silicon direct
bonding", ECS Transactions, 3(6) (2006) 191-202.
22. M. M. R. Howlader, T.
Suga, and M.
J.
Kim, “Room
temperature bonding of silicon and lithium niobate", Applied
Physics Letters 89 (2006) 031914.
21. Tadashi Kaga, Matiar
Howlader, and
Tadatomo Suga, “Surface-Activated Bonding of Aluminum/Stainless Steel
and Its
Seal Characteristics”, Journal of the Japan Society for Technology of
Plasticity, 47 (546) (2006) 592-596.
20. M. M. R. Howlader, S.
Suehara, H.
Takagi, T. H. Kim, R. Maeda, and T. Suga, “Room temperature microfluidics
packaging using sequential plasma activation process", IEEE
Transactions of
Advanced Packaging 29(3) (2006) 446-456.
19. M. M. R. Howlader, S.
Suehara, and
T.
Suga, “Room temperature
wafer level glass/glass bonding", Sensors and
Actuators A127 (2006) 31-36.
18. S. Suehara, M. R.
Howlader,
and T.
Suga, “Low temperature glass wafer bonding with sequential plasma
activation”,
Transactions of the Institute of Electronics, Information and
Communication
Engineers C, J88-C(11) 920-927 (2005).
17. M. M. R. Howlader, M. Iwashita, K. Nanbu, K. Saijo, and T. Suga, “Enhanced Cu/LCP adhesion by pre-sputter cleaning prior to Cu deposition", IEEE Transactions of Advanced Packaging 28(3) (2005) 495-502.
16. M. M. R. Howlader, T.
Suga, A.
Takahashi, K. Saijo, S. Ozawa, and K. Nanbu, “Surface activated
bonding of
LCP/Cu for electronic packaging", Journal of Materials Science 40
(2005)
3177-3184.
15. Y. Wang, M. M. R.
Howlader,
K.
Nishida, T. Kimura, and T. Suga, "Study on Sn-Ag oxidation and
feasibility
of room temperature bonding of Sn-Ag-Cu solder", Materials Transactions
40(11), (2005) 2431-2436.
14. M. M. R. Howlader, H.
Okada, T. H.
Kim, T. Itoh, and T. Suga, “Wafer
level
surface
activated
bonding
tool
for
MEMS
packaging", Journal of The Electrochemical Society 151 (2004)
G461-467.
13. T. H. Kim, M. M. R.
Howlader, T.
Itoh, and T. Suga, “Room
temperature Cu/Cu direct wafer bonding using surface
activated bonding method", Journal of Vacuum Science and Technology
A21(2)
(2003) 449-453.
12. T. Higuchi, K. Shiiyama, Y. Izumi, M. M. R. Howlader, M. Kutsuwada, and C. Kinoshita, “Effects of specimen thickness and impurity on the conductivity of alumina under electron irradiation", Journal of Nuclear Materials 307 (2002) 1250-1253.
11. M. M. R. Howlader, T. Watanabe, and T. Suga, “Characterization of the bonding strength and interface current of p-Si/n-InP wafers bonded by surface activated bonding method at room temperature", Journal of Applied Physics 91 (5) (2002) 3062-3066.
10. M. M. R. Howlader, C. Kinoshita, K. Shiiyama, and M. Kutsuwada, “Role of the specimen thickness on the electrical conductivity of alumina under fast electron irradiation", Journal of Applied Physics 92(4) (2002) 1995-1999.
9. M. M. R. Howlader, T.
Watanabe, and
T.
Suga, “Investigation of
the bonding strength and interface current of
p-Si/n-GaAs wafers bonded by the surface activated bonding method at
room
temperature", Journal of Vacuum Science and Technology B 19(6)
(2001)
2114-2118.
8. M. M. R. Howlader, C.
Kinoshita, K.
Shiiyama, and M. Kutsuwada, “Electrical
conductivity of Wesgo AL995 alumina
under fast electron irradiation in a high voltage electron microscope",
Journal
of
Applied
Physics
89(3)
(2001)
1612-1618.
7. M. M. R. Howlader, C. Kinoshita, K. Shiiyama, M. Kutsuwada, and T. Higuchi, “Significance of sample thickness and surface segregation on the electrical conductivity of Wesgo AL995 alumina under ITER environments", Journal of Nuclear Materials 89(3) (2000) 885-889.
6. K. Shiiyama, M. M. R. Howlader, Y. Izumi, M. Kutsuwada, S. Matsumura, and C. Kinoshita, “ Electrical conductivity and current-voltage characteristic of alumina and aluminum nitride with or without electron irradiation", Journal of Nuclear Materials 283-287 (2000) 912-916.
5. M. M. R. Howlader, C.
Kinoshita, K.
Shiiyama, and M. Kutsuwada, “ Electrical
insulating potential of aluminum
nitride under irradiation with fast electrons", Nuclear Instruments
and
Methods in Physics Research B
166-167 (2000) 159-164.
4. M. M. R. Howlader, C. Kinoshita, K. Shiiyama, M. Kutsuwada, and Inagaki, “ In-situ meaurements of electrical conductivity of zircalloy oxide films and their mechanism under electron irradiation", Journal of Nuclear Materials 265 (1-2) (1999) 100-107.
3. K. Shiiyama, M. M. R. Howlader, S. J. Zinkle, T. Shikama, M. Kutsuwada, S. Matsumura, and C. Kinoshita, “Electrical conductivity and current-voltage characteristics of alumina with or without neutron and electron irradiation”, Journal of Nuclear Materials 258-263 (1998) 1848-855.
2. M. M. R. Howlader, C. Kinoshita, K. Shiiyama, M. Kutsuwada, and Inagaki, “ The electrical conductivity of zircalloy oxide films", Journal of Nuclear Materials 253 (1998) 149-155.
1. M. M. R. Howlader, C. Kinoshita, T. Izu, K. Shiiyama, and M. Kutsuwada, “ In-situ measurement of electrical conductivity of alumina under electron irradiation in a high voltage electron microscope", Journal of Nuclear Materials 239 (1996) 245-252.
78. (Invited) M. M. R.
Howlader and M. J. Deen, "Nanomaterials for sensing devices and
systems for environmental applications", 26th Int. Symp.
“Nanostructures: Physics and Technology” Minsk, Belarus, June 18–24,
2018.
77. (Invited) A. U. Alam, N. -X. Hu., M. M. R. Howlader, and M. J. Deen, "Pharmaceutical contaminants and pH sensing using MWCNTs based electrodes", International Conference on Solid State Devices and Materials, Sendai, Japan (2017).
76. (Keynote)
M. M. R. Howlader, "Micro- and
nano-systems integration - the next frontier", 2017 5th International
Workshop on Low Temperature Bonding for 3D integration, Tokyo, Japan.
75.
(Best Student Paper Award) T. Z. Redhwan, A. U. Alam, Y. M.
Haddara, and M. M. R. Howlader, "Bonding mechanism and electrochemical
impedance of directly bonded liquid crystal polymer and copper", 2017
5th International Workshop on Low Temperature Bonding for 3D
integration, Tokyo, Japan.
74. (Keynote) M. J. Deen and M. M.
R. Howlader, "Nanobonding-A key technology for emerging applications in
health and environmental sciences", 4th IEEE Int Workshop on Low
Temperature Bonding for 3D Integration (LTB-3D), Tokyo, Japan (2014).
73. (Invited) M. J. Deen and M. M. R.
Howlader, "Future Nano- and Micro-systems Using Nanobonding
Techniques", International Conference on Nanomaterials 2013,
August 12-16, Western University, London, Ontario, Canada (2013).
72. (Invited) M. M. R. Howlader, "Material Aspects of Fabrication, Bonding, and Packaging for Emerging Applications", Canadian Materials Science Conference, June 4-8, The University of Western Ontario, London, Ontario, Canada (2012).
71. (Invited) M. M. R. Howlader, "Growth of Gallium Arsenide Nanostructures in Silica", 219th ECS Conference, May 1-6, Montreal, Canada (2011).
70. (Keynote) M. J. Deen, M. M. R.
Howlader, P. R. Selvaganapthy, and T. Suga, "Nanobonding technologies
for emerging applications", International Conference on Electronics
Packaging ICEP, April 13-15, 2011, Nara, Japan.
69. Fangfang Zhang, M. M. R. Howlader, and A. Yamauchi, "Surface
activated bonding of Si/SiC for high power electronic devices", International
Conference on Electronics Packaging ICEP, April 13-15, 2011, Nara,
Japan.
68. M. M. R. Howlader, Fangfang
Zhang, Jangbae Jeon, and Moon J Kim, "Room Temperature Bonding of
Germanium with Gallium Arsenide", International
Conference on Electronics Packaging ICEP, April 13-15, 2011, Nara,
Japan.
67. Saba Mohtashami, M. M. R. Howlader, Thomas Doyle, and Mehdi Taheri, "Comparative Electrochemical Investigation of Pt, Au and Ti Electrodes on Liquid Crystal Polymer for the Application of Neural Prostheses", 219th ECS Conference, May 1-6, Montreal, Canada (2011).
66. T. Yu, M. M. R. Howlader, F. Zhang, M. Bakr, "Nanobonding for Multi-Junction Solar Cells at Room Temperature", 219th ECS Conference, May 1-6, Montreal, Canada (2011).
65. M. G. Kibria, F. Zhang, K. Cormier, and M. M. R. Howlader, "Surface and interface characterization of sequentially plasma activated silicon, silicon dioxide and germanium wafers for low temperature bonding applications", ECS Conference, October 12-15, Las Vegas, Nevada (2010).
64. M. M. R. Howlader, F.
Zhang, M. G.
Kibria, T. Suga and A. Yamauchi “Surface Activated Bonding of Copper
Through
Silicon Vias and Gold Stud Bumps at Low Temperature”, Materials Science
&
Technology 2010, October 17, Huston, Texas, USA.
63. M. M. R. Howlader, F.
Zhang, M. G.
Kibria, T. Suga and A. Yamauchi, “Development of Surface Activation
Based
Nano-Bonding and Interconnect System”, 52nd Annual Electronic Materials
Conference, June 23-25, 2010, University of Notre Dame, USA.
62. J. Sun, W. Liang, Y. Gan,
Q. Xu,
C.-Q. Xu, M. Howlader, N. Koji, and T. Kishimoto, “Annealed
Proton-Exchanged
LiNbO3 Ridge Waveguide for Photonics Application”, Photonics North,
June 1-3,
2010, Niagara Falls, Canada.
61. (Invited) M. M. R. Howlader,
“Plasma
based surface activated bonding for microelectronic and biomedical
systems”,
Canadian Association of Physicist (CAP) Congress, June 6-11, 2010.
60. (Invited) M. M. R. Howlader, F.
Zhang,
M. G. Kibria, T. Suga and A. Yamauchi, “Surface Activated Bonding of
Copper
Through Silicon Vias and Gold Stud Bumps at Room Temperature”,
International
Conference on Electronics Packaging ICEP, May 12-14, 2010, Hakkaido,
Japan.
59. (Invited) M. M. R. Howlader,
“MEMS/microfluidics packaging without heating”, Society of
Photo-Optical
Instrumentation Engineers (SPIE) Photonics West, San Francisco, 23 - 28
January
2010.
58.
Matiar
Howlader,
Hiroyuki
Shintani,
Tadatomo
Suga,
Akitsu
Shigeto,
and
Akira
Yamauchi,
"Development
of
a
new
SAB
equipment
for
room
temperature
bonding",
2nd
International
IEEE
Workshop
on
Low
Temperature
Bonding
for
3D
Integration,
The
University
of
Tokyo,
Hongo,
Japan,
January
19-20,
2010.
57. (Invited) M. M. R. Howlader,
“Nanobonding technologies for optoelectronic applications”, 4th
International
Conference on Computers & Devices for Communication, Kolkata,
India,
December 14 - 16, 2009.
56. M. G. Kibria, F. Zhang, T.
H. Lee, M.
J. Kim, and M. M. R. Howlader, “Comprehensive investigation of
sequential
plasma activated Si/Si bonded interface for nano-integration”, Nano and
Giga
Challenges in Electronics, Photonics and Renewable Energy and 14th
Canadian
Semiconductor Technology Conference, August 10-14, 2009, Hamilton,
Ontario,
Canada.
55. (Invited) M. M. R. Howlader, “A
surface
activation based nanobonding technology for optoelectronics packaging”,
22nd
Annual Meeting of the IEEE Photonics Society, Turkey, 4 - 8 October
2009.
54. M. M. R. Howlader, M. G.
Kibria,
Fangfang Zhang and T. Suga, “Quantitative measurement of air-gap of
silicon/silicon interfaces”, International Conference on Electronics
Packaging
ICEP 2009 Meeting, April 14-16, 2009, Kyoto, Japan.
53. M. M. R. Howlader, T.
Suga, “Surface
activated bonding of 8 in. Si wafers for MEMS and microfluidics
packaging” The 59th
Electronic Component and Technology Conference, 2009, San Diego, CA,
USA.
52. M. M. R. Howlader,
“Nano-Bonding for
Emerging Systems Integration” International Conference on Electronics
Packaging, ICEP 2009 Meeting, June 10-12, 2008, Tokyo, Japan.
51. M. M. R. Howlader, T.
Suga, “Surface
activated bonding for flexible lamination”, Polytronic 2007 - 6th
International
Conference on Polymers and Adhesives in Microelectronics and Photonics,
January
15-18, 2007, Miraikan – Odaiba, Tokyo, Japan, pp. 271-276.
50. M. M. R. Howlader, T.
Suga, "A
novel method for bonding of ionic wafer at room temperature", The 56th
Electronic Component and Technology Conference, May 30-June 2, 2006,
San Diego,
CA, USA.
49. M. M. R. Howlader, T.
Suga, H. Itoh,
M. J. Kim, “Sequential plasma activation process for silicon direct
bonding”,
210th Meeting of Electrochemical Society, October 29-November 3, 2006,
Cancun,
Mexico.
48. M. M. R. Howlader, H.
Itoh, T. Suga,
“Surface activated bonding method for ionic wafers at low temperature”,
International Conference on Electronics Packaging ICEP 2006 Meeting,
April
15-17, 2006, Tokyo, Japan.
47. M. Hutter, T. Thomas, R.
Jordan, G.
Engelmann, H. Oppermann, H. Reichl, Y. Wang, M. Howlader, E. Higurashi,
and T.
Suga, “Investigation of different flip chip assembly processes using
Au/Sn
microbumps”, Berlin Center for Advanced Packaging at Technische
Universität
Berlin, October 5th 2005, München, Germany.
46. Y. Wang, K. Nishida, M.
Hutter, M. M.
R. Howlader, E. Higurashi, T. Kimura and T. Suga, “Surface activation
process
of lead-free solder bumps for low temperature bonding”, Proceedings of
the 6th
International Conference on Electronics Packaging Technology
(ICEPT2005),
Shenzhen, China, Aug. 30-Sept. 2, 2005.
45. M. M. R. Howlader, T.
Suga, M. J.
Kim, “Activated process and bonding mechanism of Si/LiNbO3 and
LiNbO3/LiNbO3 at
room temperature”, The 207th Meeting of the Electrochemical Society,
May 15-20,
2005, Quebec, Canada, pp. 319-325.
44. M. M. R. Howlader, S.
Suehara, H.
Takagi, T. H. Kim, R. Maeda, T. Suga, “Sequential plasma activation
process for
microfluidics packaging at room temperature”, The 55th Electronic
Component and
Technology Conference 2005, May 31-June 3, 2005, Florida, USA.
43. M. M. R. Howlader, T.
Suga, “Bonding
processes and mechanisms for ionic and piezoelectric wafers”,
International
Conference on Electronics Packaging ICEP 2005 Meeting, April 16- 18,
2005,
Tokyo, Japan pp. 253-258.
42. H. Li, M. M. R. Howlader,
T. Suga,
“Feasibility of surface activated bonding for Au and Sn deposited
films”,
International Conference on Electronics Packaging ICEP 2005 Meeting,
April 16-
18, 2005, Tokyo, Japan pp. 100-105.
41. H. H. Itoh, M. M. R.
Howlader, H. Li,
T. Suga, M. J. Kim, “Combined process of radical and RIE for Si direct
bonding”,
International Conference on Electronics Packaging ICEP 2005 Meeting,
April 16-
18, 2005, Tokyo, Japan pp. 94-99.
40. Y. Wang, M. M. R.
Howlader, K.
Okamoto, M. Mizukoshi and T. Suga, “Role of surface roughness on the
oxidation
and bonding mechanism of Sn-Ag bonding by surface activated bonding
method”,
International Conference on Electronics Packaging (ICEP2005), Tokyo,
Japan,
Apr. 13-15, 2005, pp.185-189.
39. H. Ozawa, M. M. R.
Howlader, M.
Satou, H. Ozaki and T. Suga, “Oxidation behavior of lead free solder
bumps and
their bonding characteristics”, 14th Micro Electronics Symposium (MES)
of Japan
Institute for Electronics Packaging, 14-15 October 2004, Osaka, Japan.
38. M. M. R. Howlader, T.
Suga, and Moon
J Kim, “Wafer level and chip size direct wafer bonding at room
temperature”,
206th Electrochemical Society Meeting, 3-8 October 2004, Honolulu,
Hawaii, USA.
37. (Invited) M. M. R. Howlader, and
T.
Suga, “Surface activated bonding for microelectronics and MEMS
packaging”, The
Electrochemical Society International Semiconductor Technology
Conference,
15-17 September 2004, Shanghai, China.
36. M. M. R. Howlader, K.
Nanbu, T.
Saizou, and T. Suga, “Lamination and de-lamination processes for Cu/LCP
for
electronic packaging”, The Eleventh International Conference on
Intergranular
and Inetrphase Boundaries, 25-29 July 2004, Belfast, Ireland.
35. S. Suehara, M. M. R.
Howlader, T. H.
Kim, and T. Suga, “Surface activated bonding for wafer scale
glass/glass
integration”, The Electrochemical Society International Semiconductor
Technology Conference, 15-17 September 2004, Shanghai, China.
34. Y. Wang, M. M. R.
Howlader, N.
Hosoda, K. Okamoto, T. Suga, and M. Mizukoshi, “Surface activated
bonding for
Sn-Ag and their oxidation mechanism”, The Electrochemical Society
International
Semiconductor Technology Conference, 15-17 September 2004, Shanghai,
China.
33. T. Suga, T. H. Kim, M. M.
R.
Howlader, “Combined process for wafer direct bonding by means of the
surface
activation method”, The 54nd Electronic Component and Technology
Conference
2004, June 1-4, 2004, Las Vegas, USA, pp 484-490.
32. M. M. R. Howlader, T. H.
Kim, and T.
Suga, “MEMS packaging using room temperature wafer bonding”, The 4th
International Conference on Alternative Substrate Technology, 21-25
March 2004,
Chamonix, France.
31. T. H. Kim, M. M. R.
Howlader, and T.
Suga, “Sequential activation process for silicon direct bonding”, The
4th
International Conference on Alternative Substrate Technology, 21-25
March 2004,
Chamonix, France.
30. M. M. R. Howlader, and T.
Suga, “Room
temperature MEMS packaging using low energy ion activation”, The 18th
Japanese
Institute for Electronics Packaging Conference, 17-19 March 2004,
Tokyo, Japan.
29. T. H. Kim, M. M. R.
Howlader, and T.
Suga, “Room temperature silicon direct bonding using sequential
activation
process”, The 18th Japan Institute for Electronics Packaging
Conference, 17-19
March 2004, Tokyo, Japan.
28. M. M. R. Howlader, M.
Iwashita, K.
Nanbu, T. Saijo, and T. Suga, “Bonding mechanism of Cu and LCP”, The
3rd International
IEEE Conference on Polymers and Adhesives in Microelectronics and
Photonics,
20-23 October 2003, Montreux, Switzerland, pp. 243-249.
27. M. M. R. Howlader, H.
Okada, T.H.
Kim, T. Itoh, and T. Suga, “Development of an UHV surface activated
bonding machine
for MEMS packaging”, The 203rd Meeting of the Electrochemical Society,
April
27- May 2, 2003, Paris, France.
26. T.H. Kim, M. M. R.
Howlader, T. Itoh,
and T. Suga, “Wafer scale surface
activated bonding of silicon, silicon oxide and copper at low
temperature”, The
203rd Meeting of the Electrochemical Society, April 27- May 2, 2003,
Paris,
France.
25. (Best Paper) M. M. R. Howlader,
T.H.
Kim, T. Nara,
and T. Suga, “Low temperature bonding of Si to Si, glass and Quartz
wafers by
surface activated bonding process”, International Conference on
Electronics
Packaging ICEP 2003 Meeting, April 16- 18, 2003, Tokyo, Japan, pp.
41-46.
24. T.H. Kim, M. M. R.
Howlader, and T.
Suga, “Low temperature Si direct
bonding using plasma assisted method”, International Conference on
Electronics
Packaging ICEP 2003 Meeting, April 16- 18, 2003, Tokyo, Japan, pp.
30-35.
23. H. Okada, T. Nara, M. M.
R. Howlader,
H. Takagi, R. Maeda, T. Itoh, T. Suga, “Sealing using surface activated
bonding
method”, The 16th European Conference on Solid-State Transducers,
Prague, Czech
Republic, Sept 15-18, (2002) pp 264-267.
22. T. Suga, Atsushi
Takahashi, M. M. R.
Howlader, Kinji Saijo, Shinji Oosawa, “A lamination technique of LCP/Cu
for
electronic packaging”, The 2nd International IEEE Conference on
Polymers and
Adhesive in Microelectronics and Photonics, June 23-25, 2002,
Zalaesgerzeg,
Hungary, pp.177-182.
21. Q. Wang, Z. Xu, M. M. R.
Howlader, T.
Itoh, T. Suga, “Reliability and microstructure of Au-Al and Au-Cu
direct
bonding fabricated by the surface activated bonding”, The 52nd
Electronic
Component and Technology Conference 2002, Santiago, USA, pp 915-919.
20. H. Okada, T. Nara, M. M.
R. Howlader,
H. Takagi, R. Maeda, T. Itoh, T. Suga, “Application of surface
activated
bonding to MEMS packaging”, The MSE Workshop; Key Issues for
Commercialization
of MEMS, 3rd Asian Workshop of MEMS-PKG, 1st Pacific Rim Meeting of
Techno-Linkage of Microfabrication, , AIST, Tsukuba, Japan, Feb. 20-22,
(2002)
pp 85-88.
19. T. H. Kim, M. M. R.
Howlader, T.
Itoh, T. Suga, “Oxygen plasma activated silicon direct bonding in PECVD
mode”,
International Conference on Solid State Devices and Materials (SSDM
2001),
Tokyo, Japan, 2001, pp .
18. T. H. Kim, M. M. Howlader,
T. Itoh,
and T. Suga, “Low temperature direct Cu-Cu bonding with low energy ion
activation method”, The 3rd International Symposium on Electronics
Materials
and Packaging (EMAP2001), Jeju Island, Korea, 2001, pp.193-195.
17. M. M. R. Howlader, A.
Shigetou, T.
Itoh, and T. Suga, “A revolutionary process for Microsystems
integration”, The
Annual Paper Meet and International Conference arranged by Institute of
Engineers of Bangladesh (IEB), January 11-12, 2001, Rajshahi,
Bangladesh, pp
37-45.
16. M. M. R. Howlader, T.
Watanabe, and
T. Suga, “Investigation of the bonding strength and electrical
characteristics
of Si/Si, Si/InP and Si/GaAs interfaces bonded by surface activated
bonding at
room temperature and the influence of sputtering time and energy”, The
200th
Meeting of the Electrochemical Society, September 2-7, 2001, San
Francisco,
USA.
15. M. M. R. Howlader, T.
Watanabe, and
T. Suga, “Bonding of p-Si/n-InP wafers through surface activated
bonding method
at room temperature”, The 13th international conference on Indium
Phosphide and
Related Materials (IPRM), 14-18 May 2001, Nara, Japan, pp 272-275.
14. T. Suga, M. M. R.
Howlader, T. Itoh,
C. Inaka, Y. Arai, A. Yamaguchi, “A new wafer bonder of ultra-high
precision
using surface activated bonding (SAB) concept”, The 51st Electronic
Component
and Technology Conference 2001, May 29-June 1, Florida, USA, pp
1013-1018.
13. T. Suga, T. Itoh, and M.
M. R.
Howlader, “An 8-inch wafer bonding
apparatus with ultra-high alignment accuracy using surface activated
bonding
(SAB) concept”, International Conference on Transducers, 2001, Germany,
pp .
222.
12. T. Higuchi, K. Shiiyama,
Y. Izumi, M.
M. R. Howlader, C. Kinoshita, M. Kutsuwada, “In-situ measurements of
electrical
conductivity of undoped and Cr3+alumina under electron irradiation”,
The 6th
China-Japan Seminar on Materials for Advanced Energy systems and
Fission and
Fusion Engineering, December 2000.
11. M. M. R. Howlader, C.
Kinoshita, K.
Shiiyama, M. Kutsuwada, “Significance of sample thickness and surface
segregation on the electrical conductivity of poly-and single
crystalline
alumina under ITER environments”, The 9th Int. Conf. Fusion Reactor
Materials
(ICFRM-9), October, 1999, Colorado Spring, USA.
10. K. Shiiyama, M. M. R.
Howlader, Y.
Izumi, M. Kutsuwada, S. Matsumura, C. Kinoshita, “Current-voltage
characteristics of alumina and aluminum nitride with or without
electron
irradiation”, The ICFRM-9, October, 1999, Colorado Spring, USA.
9. M. M. R. Howlader, C.
Kinoshita, K.
Shiiyama, “Electrical insulating potentials and limitations of ceramic
insulators under radiation environments”, The 10th International
Conference on
Radiation Effects in Insulators (REI-10) July, 1999.
8. M. M. R. Howlader, K.
Shiiyama, M.
Kutsuwada, C. Kinoshita, “Electrical conductivity of zircaloy oxide
films and
formation mechanism of oxide films”, The 123rd Japan Institute of
Metals (JIM)
Meeting, September 1998.
7. M. M. R. Howlader, K.
Shiiyama, M.
Kutsuwada, C. Kinoshita, “Dependence of sample thickness on the
electrical
conductivity of alumina under electron irradiation”, The JIM Meeting,
June
1998.
6. M. M. R. Howlader, K.
Shiiyama, M.
Kutsuwada, C. Kinoshita, “In-situ measurements of electrical
conductivity of
zircaloy oxide films and their formation mechanism under electron
irradiation”,
The ICFRM-8, October, 1997, Sendai, Japan.
5. K. Shiiyama, M. M. R.
Howlader, S. J.
Zinkle, T. Shikama, M. Kutsuwada, S. Matsumura, C. Kinoshita,
“Electrical
conductivity and current-voltage characteristics of alumina with and
without
neutron and electron irradiation”, The ICFRM-8, October, 1997, Sendai,
Japan.
4. M. M. R. Howlader, C.
Kinoshita, K.
Shiiyama and H. Nakamichi, "Electrical conductivity of ceramic
insulators
and zircaloy oxide films under irradiation", The China-Japan Seminar on
Fission and Fusion Materials, (1996) p. 114.
3. M. M. R. Howlader, K.
Shiiyama, M.
Kutsuwada, S. Matsumura, C. Kinoshita, “Electrical conductivity of
zircaloy
oxide films and formation mechanism of oxide films under electron
irradiation”,
The Japan Atomic Energy Commission Conference, September. 1996.
2. M. M. R. Howlader, K.
Shiiyama, M.
Kutsuwada, S. Matsumura, C. Kinoshita, “Electrical conductivity of
zircaloy
oxide films and formation mechanism of oxide films”, The JIM Kyushu
Branch
Meeting, June 1996.
1. (Best Poster) M. M. R. Howlader,
T. Izu,
K.
Shiiyama, M. Kutsuwada, C. Kinoshita, “In-situ measurements of
electrical
conductivity of alumina under electron irradiation in a high voltage
electron
microscope”, The JIM ’94 Fall Annual Meeting (117th) in Hawaii, Dec.
1995.