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The continued scaling of conventional CMOS technologies, faster MOSFET
structures incorporating SiGe and/or strained layers to enhance device
performance, and SiGe HBT devices have resulted in Si-based devices
becoming a viable alternative for high speed ICs. Specifically in the
area of wireless and biomedical technologies there is significant
interest in low-power, low-noise circuits. Our research in this area
CMOS Power Amplifiers: (Munir El-Desouki) We are exploring different circuit architectures and the novel use of oscillator blocks to design low-power, fully on-chip power amplifier circuits with very high power added efficiency. Preliminary results have been promising using class-E power amplifier circuits with all on-chip components and 0.18 μm CMOS technology.
SiGe Distributed Amplifiers: (Ehab El-Badry) Distributed amplifiers are a promising class of amplifiers for ultra wideband applications. However, these have traditionally been implemented in compound semiconductor technologies that come at a high cost. There has been considerable recent interest in SiGe implementations. Designs with bandwidths up to 60GHz have been reported. Our focus has been on noise modeling, and on ultra low-power designs, with preliminary results indicating high bandwidth, high linearity, and low noise with power consumption of ~10mW.
This page was last updated on March 02, 2005